Title :
Device geometry design for a highly robust gated-field-emission triode
Author :
Lu, S.-C. ; Huang, C.-M. ; Tsai, J.-H. ; Liu, D. ; Wang, J.-M. ; Peng, J.-G. ; Wang, W.-C. ; Lee, C.-L.
Author_Institution :
ERSO/ITRI, Hinchu, China
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Extending the emitter tip apex above the gate electrode can effectively prevent the arcing induced by local outgas accumulated inside the cavity for short-lived gated-field-emission triodes. The devices with such an extended tip can perform much better in terms of reliability and transconductance.
Keywords :
electron field emission; failure analysis; reliability; triodes; vacuum microelectronics; arcing prevention; cavity; device geometry design; emitter tip apex extension; gated-field-emission triode; highly robust triode; local outgas; reliability; tip protrusion; transconductance; Apertures; Cathodes; Dielectrics; Electrodes; Geometry; Histograms; Robustness; Testing; Transconductance; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487012
