DocumentCode :
3251365
Title :
Analysis of DC properties of SDR IMPATT structure by double iterative method designed at different microwave frequency bands
Author :
Deyasi, Arpan ; Bhattacharyya, Swapan
Author_Institution :
Dept. of Electron. & Commun. Eng., RCC Inst. of Inf. Technol., Kolkata, India
fYear :
2011
fDate :
26-28 Dec. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Numerical computation of p+nn+ SDR IMPATT structure is carrier out at X-band and Ka-band by double iterative method involving simultaneous solution of Poisson´s equation, continuity equation and space-charge equation subject to appropriate boundary conditions for electric field and normalized current density at depletion layer edges. Temperature-dependent two-step impact ionization process is considered for analysis purpose and carrier velocities are also taken as function of electric field throughout the space-charge layer. Both drift and diffusion processes are considered for simulation purpose, and results are obtained for specified doping conditions. Breakdown voltage obtained by simulation is close to the experimental data, and percentage efficiency predicted is moderate for both the frequency bands, and hence can be considered a good theoretical estimation when design is considered for implementation.
Keywords :
Poisson equation; current density; ionisation; iterative methods; microwave devices; space charge; DC property analysis; Ka-band; Poisson equation; X-band; continuity equation; depletion layer edges; diffusion process; double iterative method; drift process; electric field; microwave frequency bands; normalized current density; p+nn+ SDR IMPATT structure; space-charge equation; temperature-dependent two-step impact ionization process; Computational modeling; Current density; Doping profiles; Electric fields; Equations; Mathematical model; Semiconductor diodes; Breakdown voltage; Conversion Efficiency; Current density; Double iterative method; p+nn+ SDR structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication and Industrial Application (ICCIA), 2011 International Conference on
Conference_Location :
Kolkata, West Bengal
Print_ISBN :
978-1-4577-1915-8
Type :
conf
DOI :
10.1109/ICCIndA.2011.6146664
Filename :
6146664
Link To Document :
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