Title :
100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric
Author :
Mahapatra, S. ; Ramgopal Rao, V. ; Manjula Rani, K.N. ; Parikh, C.D. ; Vasi, J. ; Cheng, B. ; Khare, M. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
Abstract :
Metal-nitride-semiconductor (MNS) FETs with channel lengths down to 100 nm with a novel jet vapor deposited (JVD) SiN insulator as gate dielectric are fabricated and characterized for their electrical performance. By employing the charge pumping technique, the SiN interface quality and its effect on the transistor performance are evaluated. We show that, compared to conventional SiO/sub 2/ MOSFETs, the SiN devices show lower gate leakage current, competitive drain current drive and transconductance, good interface quality, and reduced hot-carrier degradation.
Keywords :
MISFET; dielectric thin films; hot carriers; interface structure; jets; leakage currents; semiconductor device measurement; silicon compounds; vapour deposited coatings; 100 nm; JVD SiN insulator; MNSFETs; SiN devices; SiN interface quality; SiN-Si; SiO/sub 2/; SiO/sub 2/ MOSFETs; channel length; charge pumping technique; drain current drive; electrical performance; gate dielectric; gate leakage current; hot-carrier degradation; interface quality; jet vapor deposited SiN insulator; jet vapor deposited ultra-thin silicon nitride gate dielectric; metal-nitride-semiconductor FETs; transconductance; transistor performance; Charge pumps; Degradation; Dielectrics and electrical insulation; FETs; Hot carriers; Leakage current; MOSFETs; Metal-insulator structures; Silicon compounds; Transconductance;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799349
