DocumentCode :
3251647
Title :
Modeling and comparisons of field emitter devices with variable geometries
Author :
Jie Nun Kang ; Jin Woo Cho ; Kim, J.M.
Author_Institution :
Samsung Adv. Inst. of Technol., Suwon, South Korea
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
211
Lastpage :
215
Abstract :
We report different geometries of gated field emitter devices and their simulation results. Each geometry is defined as tip-on-post, flat cathode and bottle-neck separately. We report the optimized tip height and width of tip-on-post with best high emission current. The electric field calculation, and emission current are compared at different aspect ratios of tip-on-post cathode. Flat cathode with gate electrode demonstrates the feasibility of diamond thin film application for triode geometry with less leakage current. The calculation of electric field of flat cathode is determined by variable geometrical parameters. In this simulation, the feasibility of bottle neck field emission cathode is reported.
Keywords :
cathodes; diamond; electric current; electric fields; electron field emission; leakage currents; modelling; vacuum microelectronics; C; aspect ratio; bottle-neck type; diamond thin film application; electric field calculation; emission current; field emitter devices; flat cathode type; gated FEAs; leakage current reduction; tip height; tip width; tip-on-post type; triode geometry; variable geometries; Carbon dioxide; Cathodes; Diamond-like carbon; Electric variables; Electrodes; Electron emission; Fabrication; Geometry; Solid modeling; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487027
Filename :
487027
Link To Document :
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