Balanced electron drift oxide etcher with Xe added gas chemistry for low cost and high performance contact metallization

Author

Komeda, H. ; Hirayama, M. ; Hirayama, Y. ; Ino, K. ; Kaihara, R. ; Ohmi, T.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

127

Lastpage

128

Abstract

A new plasma source called balanced electron drift (BED) magnetron plasma was developed for SiO/sub 2/ contact/via hole etching. E/spl times/B drift of electrons, which is notorious for degrading the uniformity of magnetron plasmas (Sekine et al, 1995), has been completely balanced by applying appropriate 100 MHz RF power to the upper ring electrode. As a result, highly uniform self bias voltage (/spl Delta/V/sub DC/<4 V) and ion flux (/spl Delta/J/sub ion/\n\n\t\t

Keywords

contact resistance; doping profiles; electrodes; gas mixtures; integrated circuit interconnections; integrated circuit metallisation; ion implantation; plasma materials processing; plasma production; silicon compounds; sputter etching; xenon; 100 MHz; 2.17 angstrom; 200 mm; 4 V; BED etcher; BED magnetron plasma; Si substrate; SiO/sub 2/; SiO/sub 2/ contact/via hole etching; Xe; Xe added gas chemistry; Xe addition; atomic radius; balanced electron drift magnetron plasma; balanced electron drift oxide etcher; balancing RF power; carbon implantation; contact etch; contact metallization; contact resistance; dopant deactivation; dopant deactivation suppression; electron drift; ion implantation; magnetron plasma uniformity; mass number; plasma source; uniform ion flux profile; uniform self bias voltage profile; upper ring electrode; Charge carrier processes; Degradation; Electrons; Etching; Magnetic flux; Plasma applications; Plasma chemistry; Plasma immersion ion implantation; Plasma sources; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799376

Filename

799376