Title :
Electron field emission from chemical vapor deposited diamond
Author :
Zhu, W. ; Kochanski, G.P. ; Jin, S. ; Seibles, L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Diamond has recently emerged as a desirable material for field emitters due to its negative electron affinity and robust mechanical and chemical properties. This study identifies structural properties which govern the electron field emission process from undoped diamond. Desirable low-voltage diamond field emitters with such properties have been synthesized by controlling various CVD process parameters.
Keywords :
chemical vapour deposition; diamond; electron affinity; electron field emission; elemental semiconductors; semiconductor thin films; vacuum microelectronics; C; CVD process parameters; chemical vapor deposition; diamond; electron field emission; low-voltage field emitters; negative electron affinity; structural properties; vacuum microelectronics; Chemical vapor deposition; Electron emission; Equations; Fabrication; Field emitter arrays; Mechanical factors; Probes; Robustness; Size control; Surface reconstruction;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487054
