Design and fabrication of diamond field emitter structures

Author

Hong, D. ; Aslam, M.

Author_Institution

Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

320

Lastpage

324

Abstract

Two different diamond field emitter structures were designed, fabricated and characterized. Boron-doped p-type crystalline diamond film grown by hot filament chemical vapor deposition (HFCVD) is used as an emitter material in both cases. A five mask fabrication process is employed using diamond film technology compatible with Si integrated circuit (IC) processing. Photoresist is used as a sacrificial layer to produce a vacuum gap between anode and cathode. Current versus voltage (I-V) data, measured at 10/sup -6/ Torr, shows Fowler-Nordheim (F-N) field emission behavior. The current density measured at 0.2 MV/cm is approximately 0.1/spl sim/0.5 A/cm/sup 2/.

Keywords

boron; chemical vapour deposition; current density; diamond; electron field emission; elemental semiconductors; masks; photoresists; semiconductor thin films; vacuum microelectronics; C:B; Fowler-Nordheim field emission behavior; I-V data; current density; diamond; emitter material; field emitter structures; hot filament chemical vapor deposition; multi-mask fabrication process; photoresist; sacrificial layer; vacuum gap; vacuum microelectronics; Chemical technology; Chemical vapor deposition; Crystalline materials; Crystallization; Current measurement; Fabrication; Integrated circuit measurements; Integrated circuit technology; Resists; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.487058

Filename

487058