Title :
The investigation of thin-film SOI substrate for the growth of III-nitride
Author :
Sun, Jiayin ; Chen, Jing ; Wang, Xi ; Wang, Jianfeng ; Liu, Wei ; Zhu, Jianjun ; Yang, Hui
Author_Institution :
State Key Lab. of Functional Mater. for Informatics, Shanghai Inst. of Microsyst. & Inf. Technol.
Abstract :
In this paper, the thin-film SOI substrates were used for the MOCVD growth of GaN. The in-situ stress measurement and Raman spectra were performed to characterize the stress distribution in the multi-films. The results show that the compliant SOI substrate can reduce the tensile stress in GaN epilayer by sacrificing the thin top silicon film
Keywords :
III-V semiconductors; MOCVD; Raman spectra; gallium compounds; semiconductor thin films; silicon-on-insulator; stress measurement; wide band gap semiconductors; GaN; III-nitride semiconductor; MOCVD growth; Raman spectra; in-situ stress measurement; stress distribution; thin-film SOI substrate; Conference proceedings; Gallium nitride; Laboratories; MOCVD; Semiconductor materials; Silicon; Stress measurement; Substrates; Tensile stress; Transistors;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284430
