Title :
A Dynamical Power-Management Demonstration Using Four-Terminal Separated-Gate FinFETs
Author :
Endo, K. ; Ishikawa, Y. ; Liu, Y.X. ; Matsukawa, T. ; O´uchi, S. ; Ishii, K. ; Masahara, M. ; Tsukada, J. ; Yamauchi, H. ; Sekigawa, T. ; Koike, H. ; Suzuki, E.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
Dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate for the first time that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit modelling; CMOS inverter; FinFET; power consumption; power-controllable CMOS technology; power-management; CMOS process; CMOS technology; Circuits; Etching; Fabrication; FinFETs; Inverters; MOSFETs; Threshold voltage; Voltage control;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284443
