Study on 1.3μm AlGaInAs High Power Broadband Super Luminescent Diode

A 1.3 mum AlGalnAs MQW SLDs with high output power and broadband spectra has been reported. The device fabricated using ridge waveguide (RWG) structure. The AR coating of device facet, integrated unpumped absorber and bend waveguide were combined together to prevent optical feedback and reduce the spectral ripple. For the SLD at 1.25 mm cavity length, the chip output power is above 23 mW when operating at 220 mA. For 420 mum cavity length, the fully packaged SLD module features that the output power is above 1.3 mW and 3 dB bandwidth is more than 60 nm, when operating at 100 mA. The results of accelerated aging test show that its median life at 25degC is more that 2.28times10⁵ hours (~26 years).