DocumentCode :
3253056
Title :
A novel multiband phase shifter with loss compensation in 180 nm RF CMOS technology
Author :
Lu, Chao ; Pham, Anh-Vu ; Livezey, Darrell
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA
fYear :
2005
fDate :
7-10 Aug. 2005
Firstpage :
806
Abstract :
We present the design and development of novel integrated multiband phase shifters that have an embedded distributed amplifier for loss compensation in 0.18 mum RF CMOS technology. The phase shifters cover 2.4 GHz to 6 GHz, which includes major bands of 802.16. The phase shifters achieve a measured continuous 180deg phase tuning range at 2.4 GHz and 360deg tuning range for both 3.5 GHz and 5.8 GHz bands. The gain at 2.4 GHz band varies from 0.14 dB to 6.6 dB during phase tuning. The insertion loss is reduced to be from -3.7 dB to 5.4 dB gain and -4.5 dB to 2.1 dB gain in 3.5 GHz and 5.8 GHz bands, respectively. The return loss is less than -10 dB in all conditions. The chip size is 1200 mum times 2300 mum including pads
Keywords :
CMOS integrated circuits; distributed amplifiers; phase shifters; radiofrequency integrated circuits; 0.14 to 6.6 dB; 0.18 micron; 2.4 to 6 GHz; RF CMOS technology; chip size; continuous phase tuning; distributed amplifier; gain; insertion loss; loss compensation; multiband phase shifter; return loss; CMOS technology; Distributed amplifiers; Fading; Gain; Insertion loss; MIMO; Phase measurement; Phase shifters; Phased arrays; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. 48th Midwest Symposium on
Conference_Location :
Covington, KY
Print_ISBN :
0-7803-9197-7
Type :
conf
DOI :
10.1109/MWSCAS.2005.1594223
Filename :
1594223
Link To Document :
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