Title :
Quantum effects influence on thin silicon film capacitor-less DRAM performance
Author :
PUGET, Sophie ; BOSSU, Germain ; Regnier, Arnaud ; Ranica, Rossella ; Villaret, Alexandre ; Masson, Pascal ; Ghibaudo, Gerard ; Mazoyer, Pascale ; Skotnicki, Thomas
Author_Institution :
STMicroelectonics, Crolles
Abstract :
As DRAM integration follows CMOS interest for thin silicon films, we analyze the impact of quantum effects on capacitor-less DRAM based on floating-body effect. Quantum effects significantly reduce the memory effect when silicon film reaches 10nm but their major impact is for thin and undoped silicon film
Keywords :
CMOS integrated circuits; DRAM chips; silicon; thin films; 10 nm; CMOS process; Si; capacitorless DRAM performance; floating-body effect; memory effect; quantum effects; thin silicon film DRAM performance; Charge carrier processes; Conference proceedings; Energy states; FETs; Impact ionization; Random access memory; Semiconductor films; Semiconductor process modeling; Silicon; Substrates;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284485
