A single-chip 94-GHz frequency source using InP-based HEMT-HBT integration technology

Author

Wang, H. ; Lai, R. ; Tran, L. ; Cowles, J. ; Chen, Y.C. ; Lin, E.W. ; Liao, H.H. ; Ke, M.K. ; Block, T. ; Yen, H.C.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

1

fYear

1998

fDate

7-12 June 1998

Firstpage

219

Abstract

This paper presents the development of a 94-GHz monolithic frequency source using InP-based HEMT-HBT integration technology. This single-chip frequency source consists of five sub-circuits: a 23.5-GHz HBT VCO, a 23.5-GHz HBT buffer amplifier, a 23.5 to 47 GHz HEMT frequency doubler, a 47 GHz HEMT buffer amplifier, and a 47 to 94 GHz HEMT doubler. The source chip has a peak output power of 1.6 dBm, with tuning range from 90.8 GHz to 94.3 GHz. This is the highest-level integration of millimeter-wave solid-state integrated circuits using this technology reported to date.

Keywords

HEMT integrated circuits; III-V semiconductors; MIMIC; heterojunction bipolar transistors; indium compounds; 94 GHz; HBT VCO; HBT buffer amplifier; HEMT buffer amplifier; HEMT doubler; HEMT frequency doubler; InP; InP HEMT-HBT integration technology; millimeter-wave solid-state integrated circuit; monolithic single-chip frequency source; output power; tuning range; Circuit optimization; Frequency; HEMTs; Heterojunction bipolar transistors; Millimeter wave integrated circuits; Millimeter wave technology; Power amplifiers; Power generation; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.689360

Filename

689360