• DocumentCode
    325455
  • Title

    New extraction method for FET extrinsic capacitances using active bias conditions

  • Author

    Lenk, F. ; Doerner, R.

  • Author_Institution
    Ferdinand-Braun-Inst., Berlin, Germany
  • Volume
    1
  • fYear
    1998
  • fDate
    7-12 June 1998
  • Firstpage
    279
  • Abstract
    A new procedure for extracting the extrinsic capacitances of FETs is presented. It requires measurements only in the active bias regime. The method utilizes the symmetry of the intrinsic FET in the forward and reverse biased operating regime. The extraction is performed analytically and does not require any optimization.
  • Keywords
    capacitance; field effect transistors; semiconductor device models; FET extrinsic capacitance; active bias; parameter extraction; symmetry; Admittance; Capacitance; Data mining; Equivalent circuits; FETs; Feedback; Gallium arsenide; MESFETs; Measurement uncertainty; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1998 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-4471-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1998.689374
  • Filename
    689374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=325455