Title :
Thickness measurement of ultra-thin gate dielectrics under inversion condition
Author :
Zhu, W.J. ; Khare, Mukesh ; Snare, J. ; Varekamp, P.R. ; Ku, S.H. ; Agnello, P. ; Chen, T.C. ; Ma, T.P.
Author_Institution :
Semicond. R&D Dev. Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures
Keywords :
MOS integrated circuits; ULSI; dielectric thin films; integrated circuit measurement; leakage currents; measurement errors; thickness measurement; ULSI technology; ac modulation frequency; gate leakage current; inversion condition; measurement error; series resistance; test device structures; thickness measurement; ultra-thin gate dielectrics; Current measurement; Dielectric measurements; Electrical resistance measurement; Frequency modulation; Leakage current; Measurement errors; Optimization methods; Thickness control; Thickness measurement; Ultra large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934522
