Title :
Impact of 0.25 μm dual gate oxide CMOS process on the flicker noise characteristics of multi-fingered MOSFETs for wireless applications
Author :
Chew, K.W. ; Yeo, K.S. ; Chu, Shao-Fu ; Wang, Y.M.
Author_Institution :
Mixed-Signal/RFCMOS Process Integration Group, Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
The low frequency noise performance of 0.25 μm thin-gate CMOS transistors from the dual gate oxide process and the standard single gate oxide process are evaluated and compared. The results reveal that thin-gate transistors from the dual gate oxide process show an order reduction in the current noise spectra. In general, the low frequency noise behaviour of the fabricated deep-submicrometer MOSFETs is best described by the number fluctuations with correlated mobility fluctuations model
Keywords :
MOSFET; UHF field effect transistors; carrier mobility; flicker noise; semiconductor device models; semiconductor device noise; 0.25 micron; correlated mobility fluctuations model; current noise spectra; deep-submicrometer MOSFETs; dual gate oxide CMOS process; flicker noise characteristics; multi-fingered MOSFETs; number fluctuations; thin-gate transistors; 1f noise; CMOS process; CMOS technology; Circuit noise; Fluctuations; Frequency; Low-frequency noise; MOSFETs; Semiconductor device noise; System-on-a-chip;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-6412-0
DOI :
10.1109/VTSA.2001.934524
