Title :
Reliability of High Power QCW-AlGaAs/GaAs 808nm cm-Bars
Author :
Lu Guoguang ; Huang Yun ; En YunFei ; Yang Shaohua ; Lei Zhifeng
Author_Institution :
Key Lab. for Reliability Phys. & Applic. Technol. of Electr. Component, CEPREI, Guangzhou, China
Abstract :
The reliability, long-term performance and lifetime of high power diode lasers are important issues for pumping of solid state and fiber laser systems. In order to obtain the lifetime data of high power QCW 808 nm cm-bars, we have set up a computer controlled diode array reliability experiment which can automated monitor the laser arrays 24 hours a day. Using this setup 10 high power QCW cm-bars currently being tested was operated for more than 5.4 billion shots at 25degC with a pulse width of 200 mus and a duty factor of 2%, and one cm-bars suffered sudden failure at 3.24 times 107 shots, one cm-bars had reached the failure criterion at 1.98 billion shots. The failure analysis of these two failed device were reported on this paper.
Keywords :
III-V semiconductors; aluminium compounds; failure analysis; gallium arsenide; laser beams; optical materials; optical pumping; optical testing; reliability; semiconductor laser arrays; AlGaAs-GaAs; aging test; automated monitoring; computer controlled diode array; failure analysis; fiber laser system; high power diode laser reliability; optical pumping; solid state laser system; temperature 25 C; time 24 h; wavelength 808 nm; Diode lasers; Fiber lasers; Gallium arsenide; Laser excitation; Optical arrays; Power lasers; Power system reliability; Pump lasers; Quantum cascade lasers; Semiconductor laser arrays;
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
DOI :
10.1109/SOPO.2009.5230296