Semianalytical Thermal Analysis on Circular Microchip Laser with Back Cooling

Author

Shi, Peng ; Li, Jinping ; Chen, Wen ; Li, Long ; Gan, Ansheng

Author_Institution

Sch. of Sci., Xi´´an Univ. of Archit. & Technol. XUAT, Xi´´an, China

fYear

2009

fDate

14-16 Aug. 2009

Firstpage

1

Lastpage

4

Abstract

Based on the theory of semianalytical thermal analysis, temperature and thermal distortion held, additional optical path difference (OPD) and thermal lens within a diode-end-pumped Nd:YAG microchip crystal with back surface cooling were investigated. Expressions of temperature and thermal distortion field, additional OPD and thermal lens were obtained through the analysis on working characteristics of the Nd:YAG microchip crystal. Expression of the thermal focal length within the Nd:YAG microchip crystal was obtained through analysis of the additional OPD caused by heat. Research results show that the maximum temperature rise on the pump face of Nd:YAG crystal is 24.3degC; the maximum thermal distortion is 112 nm; the additional OPD is 201 nm and the thermal focal length is 0.984 m when the output power of LD with Gaussian distribution is 10 W. This method can be applied to other thermal analysis of microchip laser crystal and offers a theoretical basis for the optimized design of diode-end-pumped microchip laser with back surface cooling.

Keywords

Gaussian distribution; cooling; laser beams; lenses; microchip lasers; neodymium; optical design techniques; optical pumping; thermal analysis; thermo-optical devices; Gaussian distribution; YAG:Nd; back surface cooling; circular microchip laser design; diode-end-pumped microchip crystal; optical path difference; power 10 W; semianalytical thermal analysis; size 0.984 m; temperature 24.3 degC; thermal distortion field; thermal lens; wavelength 112 nm; wavelength 201 nm; Cooling; Diodes; Laser noise; Laser theory; Lenses; Microchip lasers; Optical distortion; Power lasers; Temperature; Thermal lensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-4412-0

Type

conf

DOI

10.1109/SOPO.2009.5230309

Filename

5230309