Title :
5.5 kV normally-off low RonS 4H-SiC SEJFET
Author :
Asano, K. ; Sugawara, Y. ; Ryu, S. ; Singh, R. ; Palmour, J. ; Hayashi, T. ; Takayama, D.
Author_Institution :
Tech. Res. Center, Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
A normally-off type 5.5 kV 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation was realized by a thin regrown epitaxial channel layer and using the buried p+ regions as a gate in addition to the top p+ regions. The achieved blocking voltage (BV) is the highest BV among the reported SiC switching devices. By the expansion of the channel region under the positive biases of both gates, specific on-resistance (RonS) can be reduced and 218 mΩcm2 achieved. Furthermore, a 4H-SiC SEJFET with a BV of 4.45 kV has been fabricated, which has the largest figure of merit BV 2/RonS of 164 MW/cm2
Keywords :
junction gate field effect transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; 4H-SiC SEJFET; 5.5 kV; SiC; blocking voltage; figure of merit; normally-off type device; power semiconductor device; specific on-resistance; static expansion channel junction field effect transistor; switching device; Doping; FETs; Leakage current; Power semiconductor devices; Silicon carbide; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934551
