• DocumentCode
    3255079
  • Title

    12-19 kV 4H-SiC pin diodes with low power loss

  • Author

    Sugawara, Y. ; Takayama, D. ; Asano, K. ; Singh, R. ; Palmour, J. ; Hayashi, T.

  • Author_Institution
    Kansai Electr. Power Co., Amagasaki, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    27
  • Lastpage
    30
  • Abstract
    12-19 kV 4H-SiC UHV pin diodes have been developed for the first time. The developed UHV diodes have a low VF of less than 1/4 th and short trr of less than 1/30th, as compared with those of commercialized 6 kV Si diodes. Therefore, they can drastically reduce both the conduction loss and the switching loss of electric power conversion equipment
  • Keywords
    p-i-n diodes; power semiconductor diodes; silicon compounds; wide band gap semiconductors; 12 to 19 kV; 4H-SiC UHV pin diode; SiC; conduction loss; electric power conversion equipment; power loss; power semiconductor device; switching loss; Commercialization; Epitaxial layers; Impurities; Packaging; Power semiconductor devices; Semiconductor devices; Semiconductor diodes; Silicon carbide; Switching loss; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934552
  • Filename
    934552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255079