Title :
12-19 kV 4H-SiC pin diodes with low power loss
Author :
Sugawara, Y. ; Takayama, D. ; Asano, K. ; Singh, R. ; Palmour, J. ; Hayashi, T.
Author_Institution :
Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
12-19 kV 4H-SiC UHV pin diodes have been developed for the first time. The developed UHV diodes have a low VF of less than 1/4 th and short trr of less than 1/30th, as compared with those of commercialized 6 kV Si diodes. Therefore, they can drastically reduce both the conduction loss and the switching loss of electric power conversion equipment
Keywords :
p-i-n diodes; power semiconductor diodes; silicon compounds; wide band gap semiconductors; 12 to 19 kV; 4H-SiC UHV pin diode; SiC; conduction loss; electric power conversion equipment; power loss; power semiconductor device; switching loss; Commercialization; Epitaxial layers; Impurities; Packaging; Power semiconductor devices; Semiconductor devices; Semiconductor diodes; Silicon carbide; Switching loss; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934552
