• DocumentCode
    3255406
  • Title

    Characterization of a bi-directional double-side double-gate IGBT fabricated by wafer bonding

  • Author

    Hobart, K.D. ; Kub, F.J. ; Ancona, M. ; Neilson, J.M. ; Brandmier, K. ; Waind, P.R.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    A bi-directional double-side, double-gate IGBT fabricated through a direct wafer bonding process is characterized. As a result of the symmetrical geometry the transistors have lower VCD(SAT), however, with the aid of the second MOS gate the switching dissipation is as low as that of the conventionally-gated reference IGBT. Overall, the DIGBT gives a VCD(sat)E-OFF trade-off improvement of 40% over the reference single-side IGBT
  • Keywords
    insulated gate bipolar transistors; wafer bonding; bi-directional double-side double-gate IGBT; direct wafer bonding; fabrication; power semiconductor device; Annealing; Anodes; Bidirectional control; Fabrication; Hafnium; Insulated gate bipolar transistors; Numerical simulation; Substrates; Temperature; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
  • Conference_Location
    Osaka
  • ISSN
    1063-6854
  • Print_ISBN
    4-88686-056-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2001.934572
  • Filename
    934572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3255406