Title :
Influence of device and circuit parameters on the switching losses of an ultra fast CoolMOS/SiC-diode device-set: simulation and measurement
Author :
Petzoldt, J. ; Reimann, T. ; Lorenz, L. ; Zverev, I.
Author_Institution :
Dept. of Power Electron. & Control, Ilmenau Tech. Univ., Germany
Abstract :
The device-set consists of an ultra fast CoolMOSTM and an ultra fast high voltage ThinQ!TM SiC-Schottky diode nearly reaches the performance (losses, frequency, ruggedness) of pure SiC technology. So, new fields of application can be opened with future converter generations in high frequency power electronics. To optimize the circuits, the influence of parasitic parameters of the power semiconductor devices and circuit topologies on the switching behavior has to be analyzed exactly. Therefore, a suitable simulation tool was developed and verified by measurements in a typical application circuit. Results of simulations and measurement are presented in this paper
Keywords :
Schottky diodes; power MOSFET; power semiconductor diodes; silicon compounds; wide band gap semiconductors; SiC; ThinQ! device set; circuit topology; high-frequency power electronics; parasitic parameters; power converter; power semiconductor device; simulation tool; switching loss; ultra-fast high-voltage CoolMOS/SiC Schottky diode; Circuit simulation; Frequency conversion; Performance loss; Power electronics; Power generation; Power semiconductor devices; Semiconductor diodes; Silicon carbide; Switching loss; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934586
