Title :
Comparison and optimization of edge termination techniques for SiC power devices
Author :
Sheridan, David C. ; Niu, Guofu ; Merrett, J. Neil ; Cressler, John D. ; Dufrene, J.B. ; Casady, J.B. ; Sankin, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
Abstract :
Edge termination is a critical design area for high voltage SiC power devices. Current SiC termination designs derived from Si technology face new design issues when confronted with the unique physical properties and processing constraints of SiC. This paper presents the design and comparison of the prevailing planar and non-planar edge termination techniques, including: field plates, junction termination extensions (JTE), floating guard rings, and junction beveling. Termination structures are examined with respect to device type, influence of oxide charge, and current processing limitations
Keywords :
power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; design optimization; edge termination; field plate; floating guard ring; high-voltage SiC power device; junction beveling; junction termination extension; nonplanar technique; oxide charge; planar technique; Design engineering; Diodes; Implants; Microelectronics; Passivation; Physics computing; Power engineering and energy; Power engineering computing; Silicon carbide; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934587
