Title :
Modelling of ion-induced charge generation in high voltage diodes
Author :
Kaindl, W. ; Sölkner, G. ; Voss, P. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Munchen Univ., Germany
Abstract :
In this work we present a model which is able to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor power device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial evolutions of the electric field as well as the carrier densities in the interior of the device initiated by the ion-induced charge plasma. For sufficiently high biases strong charge multiplication suddenly sets on which conforms to recent experimental findings
Keywords :
carrier density; ion beam effects; power semiconductor diodes; semiconductor device models; semiconductor plasma; carrier density; charge injection; charge multiplication; electric field; high-voltage diode; ion irradiation; ion-induced charge plasma; kinetic energy; semiconductor power device; two-dimensional simulation; Charge carriers; Conducting materials; Ion beams; Kinetic energy; Neutrons; Plasma simulation; Semiconductor diodes; Semiconductor materials; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934595
