Title :
Lateral SOI static induction rectifiers
Author :
Yano, Koji ; Honarkhah, Shahla ; Salama, C. Andre T
Author_Institution :
Dept. of Electr. Eng., Yamanashi Univ., Kofu, Japan
Abstract :
The electrical characteristics of lateral SOI static induction (SI) rectifiers are compared with those of conventional rectifiers using device simulations. For the lateral SOI SI rectifier, the anode configuration, including a p+/n+/p region, yields an optimized carrier distribution in the active region to improve the trade-off between the forward voltage drop and the turnoff capability and results in a high ruggedness during the turnoff process. A 3-dimensional SI rectifier integrated in a lateral SOI MOSFET is also proposed
Keywords :
power MOSFET; silicon-on-insulator; solid-state rectifiers; carrier distribution; electrical characteristics; forward voltage drop; lateral SOI MOSFET; lateral SOI static induction rectifier; numerical simulation; p+/n+/p anode; three-dimensional static induction rectifier; turn-off characteristics; Anodes; Computational modeling; Electric variables; Isolation technology; MOSFET circuits; Power integrated circuits; Rectifiers; Silicon on insulator technology; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934601
