Title :
Using two-dimensional structures to model filamentation in semiconductor devices
Author :
Hower, P. ; Pendharkar, S. ; Steinhoff, R. ; Brodsky, J. ; Devore, J. ; Grose, W.
Author_Institution :
Texas Instrum., Merrimack, NH, USA
Abstract :
A simple method for demonstrating filamentation in lateral power devices is described. The results show that "mathematically perfect" junctions need to have defects added to initiate filamentation. When this is done, two-dimensional simulations exhibit behavior that is seen in practice. One application of these results is the design of protection structures
Keywords :
power semiconductor devices; semiconductor device models; current filamentation; lateral power device; semiconductor device model; two-dimensional simulation; Character generation; Driver circuits; Fingers; Impact ionization; Instruments; Pulse generation; Resistors; Semiconductor devices; Thermal resistance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on
Conference_Location :
Osaka
Print_ISBN :
4-88686-056-7
DOI :
10.1109/ISPSD.2001.934635
