The use of extracted BSIM3v3 MOS parameters for quick manual design

Author

De Carvalho Ferreira, L.H. ; Pimenta, Tales Cleber

Author_Institution

Univ. Fed. of Itajuba, Brazil

fYear

2004

fDate

6-8 Dec. 2004

Firstpage

612

Lastpage

615

Abstract

This work describes a new methodology for the extraction of DC parameters from BSIM3v3 MOS transistors. It takes into account some short channel effects not considered in the simplified level 1 model, thus providing corrections for the traditional MOS transconductance equations g_m and g_o. The parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of manual transistors´ dimensions´ calculations.

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; integrated circuit design; integrated circuit modelling; least mean squares methods; mixed analogue-digital integrated circuits; BSIM3v3 MOS transistor; CMOS analogue integrated circuits; CMOS digital integrated circuits; MOS transconductance equation; integrated circuit design; integrated circuit modelling; manual transistor dimension calculation; minimum square method; short channel effect; CMOS process; Circuit simulation; Extraterrestrial measurements; MOSFETs; Manufacturing processes; Nonlinear equations; SPICE; Semiconductor device modeling; Transconductance; Vectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on

Print_ISBN

0-7803-8656-6

Type

conf

DOI

10.1109/ICM.2004.1434739

Filename

1434739