Sensing Properties of Tellurium Based Thin Films to Oxygen, Nitrogen and Water Vapour

Author

Tsiulyanu, D. ; Stratan, I. ; Tsiulyanu, A. ; Eisele, I.

Author_Institution

Dept. of Phys., Tech. Univ., Chisinau

Volume

2

fYear

2006

fDate

27-29 Sept. 2006

Firstpage

287

Lastpage

290

Abstract

Effect of O₂, N₂ and H₂0 to electrical behaviour of tellurium-based films has been studied at temperatures between 20 degC and 70 degC. The increase of oxygen partial pressure in N O₂+ O₂ carrier gas results in a nearly linear decreasing of the film resistance. The complete impulsive substitution of nitrogen by oxygen decreases the resistance of the film with ~6 % in 1.5 hours. The effect of humidity is more perceptible. At room temperature the resistance of the films increase with 15 % at 58%RH, but humidity has a negligible effect at temperatures higher than 50degC. The results suggest that effect of water vapour is due to simple physical adsorption, whereas effect of oxygen and nitrogen is the consequence of "week" chemisorption of these molecules on the film surface

Keywords

adsorption; chemisorption; electrical conductivity; gas sensors; surface chemistry; tellurium; thin film sensors; 1.5 hrs; 20 to 70 C; carrier gas; chemisorption; electrical behaviour; film resistance; film surface; humidity effect; nitrogen; oxygen; physical adsorption; sensing properties; tellurium based thin films; water vapour; Gas detectors; Gases; Nitrogen; Oxygen; Physics; Surface morphology; Tellurium; Temperature sensors; Transistors; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

International Semiconductor Conference, 2006

Conference_Location

Sinaia

Print_ISBN

1-4244-0109-7

Type

conf

DOI

10.1109/SMICND.2006.283999

Filename

4063227