DocumentCode :
3257965
Title :
Improvements in high power LDMOS amplifier efficiency realized through the application of mixed-signal active loadpull
Author :
Barbieri, Travis A. ; Noori, Basim
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
fYear :
2013
fDate :
18-21 Nov. 2013
Firstpage :
1
Lastpage :
6
Abstract :
This paper presents the results of experimental large-signal characterization of a high power LDMOS amplifier using a mixed-signal active load pull system. The architecture of the system provides the freedom to present unique and independent reflection coefficients at multiple different frequencies. In this case the fundamental frequency, and the 2nd harmonic frequency were chosen, and the reflection coefficients presented to the output terminal of the transistor were captured at these two frequencies. A high voltage LDMOS power amplifier from Freescale Semiconductor was studied and the results will demonstrate that a distinct improvement in drain efficiency is realized through careful magnitude and phase selection of the reflection coefficient at the 2nd harmonic frequency while keeping the refection coefficient presented at the fundamental frequency at a constant optimized value.
Keywords :
MOSFET; mixed analogue-digital integrated circuits; power amplifiers; Freescale Semiconductor; harmonic frequency; high voltage LDMOS power amplifier; independent reflection coefficients; large-signal characterization; magnitude selection; mixed-signal active loadpull; multiple different frequency; phase selection; transistor; Harmonic analysis; Impedance; Power amplifiers; Probes; Semiconductor device measurement; Transmission line measurements; Tuners; Harmonic Tuning; High Power Measurement; Loadpull; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Conference, 2013 82nd ARFTG
Conference_Location :
Columbus, OH
Type :
conf
DOI :
10.1109/ARFTG-2.2013.6737345
Filename :
6737345
Link To Document :
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