Title :
Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs
Author :
Mihaila, Andrei ; Udrea, F. ; Rashid, S.J. ; Godignon, P. ; Brosselard, P. ; Tournier, D. ; Millan, J. ; Amaratunga, G. ; Brezeanu, G.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
It is well known from the literature published on Si devices that junction field effect transistors (JFETs) can be either operated in a unipolar mode (when the gate junction bias is less than 0.4 V) or in a bipolar mode (when the gate junction inject minority carriers into the channel/drift region to modulate its resistance)- The latter mode of operation is typically used to improve the on-state performance of normally-off JFETs. The aim of this paper is to investigate the bipolar mode of operation of 4H-SiC normally-on vertical JFETs. Both numerical and experimental results will be used to conclude whether the bipolar mode of operation offers any clear advantages to SiC normally-on JFETs. The influence of high temperature operation (up to 300degC) on the on-state characteristics will also be considered
Keywords :
carrier mobility; junction gate field effect transistors; minority carriers; silicon compounds; SiC; bipolar mode; gate junction; junction field effect transistors; minority carriers; normally-off JFET; normally-on vertical JFET; on-state performance; unipolar mode; Annealing; Buffer layers; Doping; Etching; FETs; JFETs; Silicon carbide; Switches; Temperature; Voltage control; JFETs; bipolar operation; high temperature operation; normally-on;
Conference_Titel :
International Semiconductor Conference, 2006
Conference_Location :
Sinaia
Print_ISBN :
1-4244-0109-7
DOI :
10.1109/SMICND.2006.284002
