Title :
High-energy electron beam lithography process simulation
Author :
Qi Gan ; Zai-Fa Zhou ; Jiang-Yong Pan
Author_Institution :
Sch. of Electron. Sci. & Technol., Southeast Univ., Nanjing, China
Abstract :
In this paper, we present the model of electron beam lithography. This model includes elastic cross section, inelastic cross section, energy-loss rate model and etch rate model. For elastic cross section, Rutherford cross section and Browning´s Mott cross section are adopted. For inelastic cross section, Moller cross section and Gryzinsky cross section are used. To calculate energy-loss rate, we use different forms of Bethe formulas. The etch rate model is used to calculate the etch rate. The simulation is implemented with Monte Carlo method for PMMA resist. Various development profiles are obtained through the simulation.
Keywords :
Monte Carlo methods; elasticity; electron beam lithography; energy loss of particles; etching; organic semiconductors; polymers; resists; Bethe formulas; Browning Mott cross-section; Gryzinsky cross section; Moller cross-section; Monte Carlo method; PMMA resist; Rutherford cross section; elastic cross-section; energy-loss rate model; etch rate model; high-energy electron beam lithography process simulation; inelastic cross-section; Electron beams; Energy loss; Lithography; Monte Carlo methods; Resists; Scattering; Three-dimensional displays; Development profiles; Electron beam lithography; Etch rate model; Monte Carlo method;
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2013 International Conference on
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1210-0
DOI :
10.1109/3M-NANO.2013.6737408
