Title :
Imaging of charging specimens at high beam energies in the SEM
Author :
Wong, WK ; Phang, JCH ; Thong, JTL
Author_Institution :
Fac. of Eng., Nat. Univ. of Singapore, Singapore
fDate :
27 Nov-1 Dec 1995
Abstract :
This paper describes a novel method to observe charging specimens at high beam voltages without specimen preparation. It was found that the technique greatly reduces charging artifacts such as raster faults, discharge streaks, astigmatism and defocussing without sacrificing image quality. Images obtained of uncoated specimens are found to be comparable to gold-coated specimens and without charging effects
Keywords :
failure analysis; integrated circuit measurement; integrated circuit testing; scanning electron microscopy; surface charging; IC testing; SEM; astigmatism; beam energies; charging artifacts; charging specimens; defocussing; discharge streaks; image quality; raster faults; Electron beams; Electron emission; Failure analysis; Image quality; Insulation; Low voltage; Reliability engineering; Scanning electron microscopy; Vacuum technology; Vision defects;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the
Print_ISBN :
0-7803-2797-7
DOI :
10.1109/IPFA.1995.487595
