Plasma damage study using fully processed MOS transistors

Author

Prabhakar, V. ; Brozek, Tomasz ; Li, X. ; Chan, Y.D. ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1995

fDate

27 Nov-1 Dec 1995

Firstpage

140

Lastpage

144

Abstract

MOS transistors with different antenna ratios were used to study plasma etching damage in this work. Electrical techniques that can only be used in MOS transistors, such as transconductance noise measurements, charge pumping measurements, and gate induced drain leakage measurements (GIDL) were employed to study plasma damage at the gate edges. Experiments were also performed to determine hot carrier reliability, and the results indicate the importance of plasma induced damage for actual device operation

Keywords

MOSFET; hot carriers; leakage currents; semiconductor device noise; semiconductor device reliability; sputter etching; GIDL; antenna ratios; charge pumping measurements; fully processed MOS transistors; gate induced drain leakage measurements; hot carrier reliability; plasma etching; plasma induced damage; transconductance noise measurements; Antenna measurements; Charge measurement; Current measurement; Electric variables measurement; Etching; MOSFETs; Noise measurement; Plasma applications; Plasma devices; Plasma measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1995., Proceedings of the 1995 5th International Symposium on the

Print_ISBN

0-7803-2797-7

Type

conf

DOI

10.1109/IPFA.1995.487612

Filename

487612