DocumentCode :
3259802
Title :
Efficient Output Esd Protection Of High-speed Sram Ic With Well-coupled Technique In Sub-pm Cmos Technology
Author :
Chau-Neng Wu ; Ming-Dou Ker ; Yu, T.-L.
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
40
Lastpage :
43
Keywords :
CMOS integrated circuits; CMOS process; CMOS technology; Electrostatic discharge; High speed integrated circuits; MOS devices; Protection; Random access memory; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614723
Filename :
614723
Link To Document :
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