A 3-V CMOS differential bandpass amplifier for GSM receivers

Author

Leung, David L C ; Luong, Howard C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong

Volume

4

fYear

1998

fDate

31 May-3 Jun 1998

Firstpage

341

Abstract

A 3V CMOS differential bandpass amplifier to be integrated in a GSM RF front-end is presented. With a center frequency tuning circuit, the center frequency can be varied from 877 to 962 MHz, and with a Q-compensation circuit, the Q-value can be tuned from 3 to 230. Detailed analysis of the noise figure including the resistive losses in on-chip inductors is given. With a 3V supply and a Q of 32, the amplifier achieves a noise figure of 5.2 dB, a power gain of 25 dB and consumes 45 mW. The IIP₃ and Po_{-1 dB} are -32.5 dBm and -44 dBm respectively

Keywords

CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; cellular radio; circuit tuning; compensation; differential amplifiers; integrated circuit noise; 25 dB; 3 V; 45 mW; 5.2 dB; 877 to 962 MHz; CMOS differential bandpass amplifier; GSM receivers; Q-compensation circuit; center frequency tuning circuit; noise figure; on-chip inductors; power gain; resistive losses; Circuit optimization; Differential amplifiers; GSM; Gain; Inductors; Noise figure; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Tuned circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-4455-3

Type

conf

DOI

10.1109/ISCAS.1998.698839

Filename

698839