Title :
A Single-Halo Dual-Material Gate SOI MOSFET
Author :
Li, Zunchao ; Jiang, Yaolin ; Zhang, Lili
Author_Institution :
School of Electronics and Information Eng., Xi´´an Jiaotong University, Xi´´an, Shaanxi Province, 710049, China
Abstract :
A dual-material gate is applied to a single-halo SOI MOSFET in order to suppress short channel effects. Two-dimensional analytical models of surface potential and threshold voltage for the novel device are developed based on the explicit solution of the Poisson´s equation. The characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of hot carrier effect and threshold voltage roll-off, and higher carrier transport efficiency than a single-halo SOI MOSFET. The analytical models agree well with two-dimensional device simulator MEDICI.
Keywords :
Analytical models; Doping profiles; Hot carrier effects; MOSFET circuits; Medical simulation; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage; SOI; analytical model; dual material gate; halo; threshold voltage;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
DOI :
10.1109/EDST.2007.4289779
