Title :
Resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films for nonvolatile memory applications
Author :
Huang, Lina ; Qu, Bingjun ; Liu, Litian
Author_Institution :
Institute of Microelectronics, Tsinghua University, Beijing 100084, China. Email: huangln04@mails.thu.edu.cn
Abstract :
The nonvolatile and reversible resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films prepared by a pulsed laser deposition (PLD) technique were investigated. Clear resistance switching cycles were observed at room temperature under voltage pulses of ~100ns duration. Reproducible switching properties, involving low write threshold voltage, active pulse width window and long endurance lifetime, demonstrate well controllability with respect to future nonvolatile random access memory applications.
Keywords :
Electric resistance; Laser ablation; Nonvolatile memory; Optical pulses; Pulsed laser deposition; Random access memory; Read-write memory; Space vector pulse width modulation; Temperature; Voltage; Electric-pulse-induced; La0.67Sr0.33MnO3; pulsed laser deposition (PLD); random access memory; resistive switching;
Conference_Titel :
Electron Devices and Semiconductor Technology, 2007. EDST 2007. Proceeding of 2007 International Workshop on
Conference_Location :
Tsinghua University
Print_ISBN :
1-4244-1098-3
Electronic_ISBN :
1-4244-1098-3
DOI :
10.1109/EDST.2007.4289784
