Metal gate work function adjustment for future CMOS technology

Author

Qiang Lu ; Lin, R. ; Ranade, P. ; Tsu-Jae King ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2001

fDate

12-14 June 2001

Firstpage

45

Lastpage

46

Abstract

CMOS transistors were fabricated using a single metal, [110]-Mo, as the gate material. [110]-Mo shows a high work function value that is suitable for PMOSFETs, and, with nitrogen implantation, its work function can be reduced to meet the requirements of NMOSFETs. The change in Mo work function can be controlled by the nitrogen implant parameters, which is potentially useful for multiple-V/sub T/ technology. TEM and EDS analysis show that Mo gate electrodes are stable after undergoing a conventional CMOS process.

Keywords

CMOS integrated circuits; MOSFET; X-ray chemical analysis; electrodes; integrated circuit interconnections; integrated circuit metallisation; ion implantation; molybdenum; transmission electron microscopy; work function; CMOS process; CMOS technology; CMOS transistors; EDS analysis; Mo gate electrode stability; Mo work function; Mo-SiO/sub 2/-Si; Mo:N; NMOSFETs; PMOSFETs; TEM; metal gate work function adjustment; multiple-threshold voltage technology; nitrogen implant parameters; nitrogen implantation; single metal [110]-Mo gate material; work function; Annealing; CMOS process; CMOS technology; Dielectric materials; Etching; Implants; Inorganic materials; Lithography; MOSFET circuits; Nitrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934939

Filename

934939