Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects

Author

Qiqing Ouyang ; Xiangdong Chen ; Tasch, A.F. ; Register, L.F. ; Banerjee, S.K. ; Chu, J.O. ; Ott, J.A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2001

fDate

12-14 June 2001

Firstpage

53

Lastpage

54

Abstract

We have fabricated, for the first time, a novel vertical p-channel metal-oxide-semiconductor field-effect transistor (MOSFET), also called the high mobility hetero-junction transistor (HMHJT). Significantly reduced short channel effects and floating body effects, and enhanced drive current have been achieved. Compared to a Si control device, the fabricated p-HMHJT has a 1.65/spl times/ higher drive current (V/sub DS/=-1.6 V and V/sub G/-V/sub T/=-2 V), and a 70/spl times/ lower off-state leakage (V/sub DS/=-1.6 V).

Keywords

MOSFET; carrier mobility; electric current; leakage currents; semiconductor device measurement; semiconductor technology; -1.6 V; -2 V; HMHJT; MOSFET; Si control device; drive current; floating body effects; high mobility hetero-junction transistor; off-state leakage; short-channel effects; vertical p-channel metal-oxide-semiconductor field-effect transistor; vertical pMOSFET fabrication; Artificial intelligence; Doping; Energy barrier; FETs; Fabrication; Germanium silicon alloys; Lifting equipment; MOSFET circuits; Microelectronics; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-012-7

Type

conf

DOI

10.1109/VLSIT.2001.934943

Filename

934943