Title :
Wide tuning-range MOS varactors based on SOI
Author :
Yan, Tao ; Zhang, Gnoyan ; Shi, Hao ; Huang, Ru ; Zhang, Xing
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
MOS varactors based on SOI substrate with very wide tuning-range are presented in this paper. Compared with bulk silicon substrate, varactors based on SOI substrate have wider tuning-range due to less parasitic capacitance. These varactors including n-type accumulation mode MOS varactor (AMOS), n-type gated diode (GD) and p-type GD. are fabricated with the same CMOS process technology and compared with bulk ones. Results show SOI varactors´ tuning range is wider than bulk ones to a large extent.
Keywords :
MIS structures; silicon-on-insulator; varactors; CMOS process; SOI varactors; accumulation mode MOS varactor; n-type gated diode; p-type gated diode; parasitic capacitance; wide tuning-range MOS varactors; CMOS process; Circuit optimization; Diodes; Radio frequency; Silicon; Substrates; Tuning; Varactors; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1434988
