A generic numerical model on heterodyne terahertz detection in field effect transistor

The heterodyne detection characteristics of field effect transistors are studied in this paper. Based on the hydrodynamic equations which govern the terahertz signal transport in field effect MOS transistors, a numerical simulation program is developed. This program works well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. The work demonstrates the potential to use MOS transistors for THz detectors and the method to optimize the device structure. Simulation results agree well with the existing theory in the nonresonant situations.