DocumentCode :
3263854
Title :
Annealing and aging in GaInP-based red VCSELs
Author :
Herrick, Robert W. ; Petroff, Pierre M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
66
Abstract :
GaInP-based red VCSELs have been under investigation for use in data communications through inexpensive plastic fiber, which has low loss from 570-650 nm. However, red VCSEL lifetimes have generally been no greater than a few thousand hours, a factor of at least 10 to 100 less than is desired. We have been studying the aging process in red VCSELs with the hope of improving their reliability
Keywords :
III-V semiconductors; ageing; annealing; gallium compounds; indium compounds; laser reliability; semiconductor lasers; surface emitting lasers; 570 to 650 nm; GaInP; aging; annealing; data communication; lifetime; plastic fiber; red VCSEL; reliability; Accelerated aging; Annealing; Degradation; Electrical resistance measurement; Life testing; Power generation; Protons; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645246
Filename :
645246
Link To Document :
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