مرکز منطقه ای اطلاع رساني علوم و فناوري - Integrated Ferroelectric Technology For Nonvolatile

DocumentCode :

3265085

Title :

Integrated Ferroelectric Technology For Nonvolatile

Author :

Sumi, Tatsumi

fYear :

1997

fDate :

3-5 June 1997

Firstpage :

157

Lastpage :

161

Keywords :

CMOS process; Conducting materials; EPROM; Electrodes; Ferroelectric materials; Nonvolatile memory; Random access memory; Stress; Switches; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location :

Taipei, Taiwan

ISSN :

1524-766X

Print_ISBN :

0-7803-4131-7

Type :

conf

DOI :

10.1109/VTSA.1997.614749

Filename :

614749

Link To Document :