Temperature dependence of gain characteristics in 1.3-μm AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers

Author

Higashi, T. ; Fujii, T. ; Yamamoto, T. ; Ogita, S. ; Kobayashi, M.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

136

Abstract

Summary form only given. So far 1.3 μm AlGaInAs-InP strained MQW lasers have achieved high characteristic temperature T₀ of 120 K and high operating temperature of 185 C. In this paper, we evaluated temperature dependence of the gain characteristics in AlGaInAs-InP lasers, and found that the high T₀ was caused by the smaller temperature dependence of the spontaneous emission efficiency than that of GaInAsP-InP lasers

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; spontaneous emission; 1.3 mum; 185 C; AlGaInAs-InP; AlGaInAs-InP lasers; AlGaInAs-InP strained MQW lasers; AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers; GaInAsP-InP; gain characteristics; high T₀; high characteristic temperature; high operating temperature; smaller temperature dependence; spontaneous emission efficiency; temperature dependence; Current density; Indium phosphide; Laboratories; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Temperature dependence; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645308

Filename

645308