Title :
Image processing in the material science or fractal behaviour on the GaAs/electrolyte interface
Author :
Nemcsics, Ákos ; Schuszter, Miklós ; Dobos, László ; Turmezei, Péter
Author_Institution :
Inst. for Microelectron. & Technol., Budapest
Abstract :
Here, pattern formation on GaAs (001) surface after electrochemical layer removal with the help of image processing was investigated. The morphology of GaAs surface shown fractal behaviour under non-selective etching conditions. The morphological surface study was carried out using digital image processing of scanning electron microscope data. The surface patterns were segmented by the so called grade of membership method. Fractal properties were established using the box counting method.
Keywords :
III-V semiconductors; electrolytes; etching; gallium arsenide; scanning electron microscopy; surface morphology; GaAs; box counting method; electrochemical layer removal; electrolyte; fractal behaviour; image processing; material science; nonselective etching; pattern formation; scanning electron microscope; surface morphology; Digital images; Etching; Fractals; Gallium arsenide; Image processing; Image segmentation; Materials science and technology; Pattern formation; Scanning electron microscopy; Surface morphology;
Conference_Titel :
Intelligent Systems and Informatics, 2008. SISY 2008. 6th International Symposium on
Conference_Location :
Subotica
Print_ISBN :
978-1-4244-2406-1
Electronic_ISBN :
978-1-4244-2407-8
DOI :
10.1109/SISY.2008.4664942
