Title :
Design of X-band low-noise amplifier for optimum matching between noise and power
Author :
Wang, Xiao-Meil ; Sun Zhengwen ; Yong, Chen ; Sixiu, Wang
Author_Institution :
Urumqi Obs., Chinese Acad. of Sci., Urumqi, China
Abstract :
High Electron Mobility Transistors (HEMT) plays a crucial role in microwave low noise receivers. Low noise HEMTs are used extensively in the ultra low noise amplifier (LNAs). Design the LNA is difficult for the radio astronomical observations, especially the realization of the simultaneous about the noise matching and the power matching, as well as the full band unconditional stability. With the Agilent Advanced Design System (ADS) simulation tools, the X-band three-stage LNA using NEC-NE3210S01 HEMTs has been designed: Noise Figure<;0.6dB; power Gain>30dB at X-band (7.8~9.4GHz), full band unconditional stability.
Keywords :
electron device noise; high electron mobility transistors; low noise amplifiers; microwave amplifiers; network synthesis; Agilent Advanced Design System simulation tools; HEMT; LNA; X-band low-noise amplifier design; frequency 7.8 GHz to 9.4 GHz; full band unconditional stability; high electron mobility transistors; microwave low noise receivers; noise figure; noise matching; power matching; radio astronomical observations; ultralow noise amplifier; Computer science education; Educational technology; Electron mobility; Frequency; HEMTs; Low-noise amplifiers; Microwave transistors; Noise figure; Observatories; Stability; HEMT; Noise matching; Power matching; wide-band LNA;
Conference_Titel :
Education Technology and Computer (ICETC), 2010 2nd International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6367-1
DOI :
10.1109/ICETC.2010.5529786
