Title :
Variable V/sub cc/ design techniques for battery operated DRAMs
Author :
Seung Moon Yoo ; Ejaz Haq ; Seung-Hoon Lee ; Yun-Ho Choi ; Soo-In Cho ; Nam-Soo Kang ; Dae je Chin
Author_Institution :
Samsung Electron. Co., Kyungki-Do, South Korea
Abstract :
The authors describe a variable V/sub cc/ design technique to extend battery life. Several special circuits for low V/sub cc/, compensated DC generators and wordline drivers are proposed. These are implemented in a 16 M DRAM using 1 polycide, 3 poly, double-metal, and stacked capacitor based 0.4 mu m CMOS technology. The simulated speed of V/sub cc/ variable design is compared with conventional design at 25 degrees C. The slowdown below 2 V is due to threshold voltage and transistor characteristics.<>
Keywords :
CMOS integrated circuits; DRAM chips; driver circuits; voltage regulators; 0.4 micron; 16 Mbit; 25 degC; CMOS technology; battery life; battery operated DRAMs; compensated DC generators; variable voltage design techniques; wordline drivers; Batteries; Capacitors; Character generation; Circuits; Design optimization; Detectors; Frequency; Low voltage; Oscillators; Random access memory;
Conference_Titel :
VLSI Circuits, 1992. Digest of Technical Papers., 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0701-1
DOI :
10.1109/VLSIC.1992.229267
