DocumentCode :
3267831
Title :
Novel and simple table-based HBT large-signal model
Author :
Degachi, Louay ; Ghannouchi, Fadhel M.
Author_Institution :
Ecole Polytech. Montreal, Montreal
fYear :
2007
fDate :
5-8 Aug. 2007
Firstpage :
622
Lastpage :
625
Abstract :
A novel and simple table-based HBT large-signal model is presented. All parameters are tabulated as two- parameter functions. The model accounts for self-heating by allowing ideality factors and saturation currents to be functions of the dissipated power. Small-signal model parameters, systematically extracted from RF S-parameter measurements, are used in conjunction with DC measurements to extract static model parameters characterizing the forward active regime of operation. Such a procedure ensures consistency between small-signal and DC simulations. A 1x10 mum2 emitter-area InGaP/GaAs HBT device is used to validate the proposed model.
Keywords :
S-parameters; heterojunction bipolar transistors; semiconductor device models; RF S-parameter measurement; table-based HBT large-signal model; Analog integrated circuits; Computational modeling; Data mining; Gallium arsenide; Heterojunction bipolar transistors; Identity-based encryption; Power system modeling; Radio frequency; Scattering parameters; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location :
Montreal, Que.
ISSN :
1548-3746
Print_ISBN :
978-1-4244-1175-7
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2007.4488658
Filename :
4488658
Link To Document :
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