Title :
Low power interference-robust UWB Low Noise Amplifier in 0.18-μm CMOS technology
Author :
Youssef, Ahmed A. ; Haslett, James W.
Author_Institution :
Univ. of Calgary, Calgary
Abstract :
This paper proposes a very low power low noise amplifier (LNA) operating from 3.1 GHz to 8 GHz for OFDM- UWB systems. The LNA is intended to cover groups 1 and 3 while filtering out group 2, whose spectrum is shared with WLAN signals representing troublesome interference. By utilizing both nMOS and pMOS transistors to boost the transconductance, the LNA draws only 1.5 mA from a 1.5 V supply. The LNA IC has been realized in 0.18 mum CMOS technology from TSMC.
Keywords :
CMOS analogue integrated circuits; MOSFET; OFDM modulation; low noise amplifiers; power amplifiers; ultra wideband technology; CMOS technology; OFDM-UWB system; UWB low noise amplifier; WLAN signal; frequency 3.1 GHz to 8 GHz; low power amplifier; low power interference; nMOS transistor; pMOS transistor; size 0.18 micron; voltage 1.5 V; CMOS technology; Character generation; Energy consumption; Impedance matching; Interference; Low-noise amplifiers; OFDM; Power amplifiers; Topology; Wireless LAN;
Conference_Titel :
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
978-1-4244-1175-7
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2007.4488732
