DocumentCode
3269155
Title
Low power interference-robust UWB Low Noise Amplifier in 0.18-μm CMOS technology
Author
Youssef, Ahmed A. ; Haslett, James W.
Author_Institution
Univ. of Calgary, Calgary
fYear
2007
fDate
5-8 Aug. 2007
Firstpage
1006
Lastpage
1009
Abstract
This paper proposes a very low power low noise amplifier (LNA) operating from 3.1 GHz to 8 GHz for OFDM- UWB systems. The LNA is intended to cover groups 1 and 3 while filtering out group 2, whose spectrum is shared with WLAN signals representing troublesome interference. By utilizing both nMOS and pMOS transistors to boost the transconductance, the LNA draws only 1.5 mA from a 1.5 V supply. The LNA IC has been realized in 0.18 mum CMOS technology from TSMC.
Keywords
CMOS analogue integrated circuits; MOSFET; OFDM modulation; low noise amplifiers; power amplifiers; ultra wideband technology; CMOS technology; OFDM-UWB system; UWB low noise amplifier; WLAN signal; frequency 3.1 GHz to 8 GHz; low power amplifier; low power interference; nMOS transistor; pMOS transistor; size 0.18 micron; voltage 1.5 V; CMOS technology; Character generation; Energy consumption; Impedance matching; Interference; Low-noise amplifiers; OFDM; Power amplifiers; Topology; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location
Montreal, Que.
ISSN
1548-3746
Print_ISBN
978-1-4244-1175-7
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2007.4488732
Filename
4488732
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