Title :
Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits
Author :
Larson, L. ; Case, M. ; Rosenbaum, S. ; Rensch, D. ; Macdonald, P. ; Matloubian, M. ; Chen, M. ; Harame, D. ; Malinowski, J. ; Meyerson, B. ; Gilbert, M. ; Maas, S.
Author_Institution :
Huges Res. Labs., Malibu, CA, USA
Abstract :
This silicon-based microwave integrated-circuit technology is suitable for implementation of high-performance low-cost active circuits from 5-25 GHz. This technology promises to dramatically reduce the cost of microwave integrated circuit technology by utilizing manufacturable, high-yield, silicon IC processing, and at the same time enable more highly integrated implementations of microwave transceiver components. A variety of microwave integrated circuits implemented in this technology include mixers, frequency dividers, amplifiers and VCOs, demonstrating feasibility of silicon integrated circuit technology for implementation of low-cost integrated circuits in the upper microwave spectrum.
Keywords :
Ge-Si alloys; bipolar MMIC; heterojunction bipolar transistors; integrated circuit technology; silicon; 5 to 25 GHz; Si-SiGe; Si/SiGe HBT technology; VCOs; amplifiers; frequency dividers; low-cost active circuits; mixers; monolithic microwave integrated circuits; silicon IC processing; transceiver components; Active circuits; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit manufacture; Integrated circuit technology; Manufacturing processes; Microwave integrated circuits; Microwave technology; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488522
